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| PD- 95436A IRF7807D2PBF * Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier * Lead-Free FETKY MOSFET / SCHOTTKY DIODE A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Description The FETKYTM family of Co-Pack HEXFET(R) MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 Top View Device Features (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25m 14nC 5.2nC 21.6nC Units V A W A C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W www.irf.com 1 10/7/04 IRF7807D2PBF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C VGS = +/-12V VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC Gate Threshold Voltage* VGS(th) IDSS Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 17.6 1.2 +/- 100 14 17 nA 5.2 21.6 VDS = 16V, VGS = 0 Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) * Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D2PBF 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 2.5V 2.5V 10 380s PULSE WIDTH Tj = 25C 1 0.1 1 10 1 0.1 380s PULSE WIDTH Tj = 150C 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 60 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 70 60 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 50 40 30 20 10 0 0 50 40 30 20 10 0 0 0.0 V 380s PULSE WIDTH Tj = 25C 0.2 0.4 0.6 0.8 1 O.OV 380S PULSE WIDTH Tj = 150C 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics www.irf.com 3 IRF7807D2PBF 2000 1600 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6 ID = 7.0A VDS = 16V C, Capacitance (pF) 4 1200 Ciss Coss 800 2 400 Crss 0 1 10 100 0 0 4 8 12 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2.0 100 R DS(on) , Drain-to-Source On Resistance ID = 7.0A ID, Drain-to-Source Current () VGS = 4.5V T J = 25C (Normalized) 1.5 T J = 150C 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 10 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J, Junction Temperature (C ) VGS, Gate-to-Source Voltage (V) Fig 7. Normalized On-Resistance Vs. Temperature Fig 8. Typical Transfer Characteristics 4 www.irf.com IRF7807D2PBF R DS(on) , Drain-to -Source On Resistance ( ) R DS (on), Drain-to-Source On Resistance ) ( 0.05 0.024 0.04 0.022 VGS = 4.5V 0.020 0.03 0.02 ID = 7.0A VGS = 10V 0.018 0.01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate -to -Source Voltage (V) I D , Drain Current (A) Fig 9. On-Resistance Vs. Gate Voltage Fig 10. On-Resistance Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 5 IRF7807D2PBF Mosfet, Body Diode & Schottky Diode Characteristics 100 100 Tj = 150C Reverse Current - I R ( mA ) 10 125C 1 100C 75C Tj = 125C Tj = 25C Instantaneous Forward Current - I F ( A ) 0.1 50C 10 0.01 25C 0.001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D2PBF SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (F ET KY) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY SIT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX 807D1 www.irf.com 7 IRF7807D2PBF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com |
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